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| STB7N52K3 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET | |||
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Electrical characteristics
STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
On /off states
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 3.1 A
Min. Typ. Max. Unit
525
V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
0.84 0.98 â¦
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS = 15 V, ID = 3.1 A
TBD
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
TBD
TBD
TBD
pF
pF
pF
COSS
(1)
eq
Equivalent output
capacitance
VGS = 0, VDS = 0 to 420 V
TBD
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
TBD
â¦
Qg
Total gate charge
VDD = 420 V, ID = 6.3 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 3)
TBD
nC
TBD
nC
TBD
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 262 V, ID = 3.1 A,
RG = 4.7 â¦, VGS = 10 V
(see Figure 2)
Min.
Typ.
TBD
TBD
TBD
TBD
Max Unit
ns
ns
ns
ns
4/15
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