STB7N52K3 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET

STB7N52K3 - STD7N52K3
STF7N52K3 - STP7N52K3
N-channel 525 V, 0.84 Ω, 6.3 A, D²PAK, DPAK, TO-220FP, TO-220
SuperMESH3™ Power MOSFET
Preliminary Data
Features
Type
V_DSS
R_DS(on)
max
I_D
Pw
STB7N52K3
STD7N52K3
STF7N52K3
STP7N52K3
525 V
525 V
525 V
525 V
< 0.98 Ω 6.3 A 90 W
< 0.98 Ω 6.3 A 90 W
< 0.98 Ω 6.3 A⁽¹⁾ 25 W
< 0.98 Ω 6.3 A 90 W
1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
■ Switching applications
Description
The new SuperMESH3™ series is obtained
through the combination of a further fine tuning of
ST's well established strip-based PowerMESH™
layout with a new optimization of the vertical
structure. In addition to reducing on-resistance
significantly versus previous generation, special
attention has been taken to ensure a very good
dv/dt capability and higher margin in breakdown
voltage for the most demanding application.
Table 1. Device summary
Order codes
Marking
STB7N52K3
STD7N52K3
STF7N52K3
STP7N52K3
7N52K3
7N52K3
7N52K3
7N52K3
3
1
D²PAK
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tape and reel
Tube
Tube
July 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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