STB7N52K3 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET

STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 DPAK D²PAK TO-220FP
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
525
± 30
6.3
4
25
90
0.72
6.3 ⁽¹⁾
4⁽¹⁾
25 ⁽¹⁾
25
0.2
V
V
A
A
A
W
W/°C
Gate source ESD(HBM-C = 100 pF,
V_{ESD(G-S) R = 1.5 kΩ)}
dv/dt ⁽³⁾ Peak diode recovery voltage slope
2500
TBD
V
V/ns
Insulation withstand voltage (RMS) from all
V_ISO three leads to external heat sink
--
(t = 1 s; TC = 25 °C)
2500
V
T_stg Storage temperature
T_j Max. operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 6.3 A, di/dt = TBD, V_DD = 80% V_(BR)DSS.
Table 3. Thermal data
Symbol
Parameter
-55 to 150
°C
150
°C
TO-220 DPAK D²PAK TO-220FP Unit
R_thj-case
R_thj-pcb
R_thj-amb
T_l
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
1.39
--
50 30
62.5 --
--
300
5
°C/W
--
°C/W
62.5 °C/W
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
I_AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_j max)
6.3
A
Single pulse avalanche energy
E_{AS (starting Tj = 25°C, ID = IAR, VDD = 50V)}
TBD
mJ
3/15