STB45N50DM2AG Datasheet, PDF (4/15 Pages) STMicroelectronics – Fast-recovery body diode

Electrical characteristics
STB45N50DM2AG
2
Electrical characteristics
(T_case = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VGS = 0 V, VDS = 500 V
VGS = 0 V, VDS = 500 V,
Tcase = 125 °C
VDS = 0 V, VGS = ±25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 17.5 A
Min. Typ. Max. Unit
500
V
10
µA
100
±5 µA
3
4
5
V
0.070 0.084 Ω
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss Input capacitance
Coss
Output
capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
Crss
Reverse transfer
capacitance
- 2600 -
- 140
-
pF
-
2.4
-
Coss
(1)
eq.
Equivalent output
capacitance
VDS = 0 to 400 V, VGS = 0 V
RG
Intrinsic gate
resistance
f = 1 MHz, ID = 0 A
- 220 - pF
-
4
-
Ω
Qg Total gate charge
-
57
-
Qgs
Gate-source
charge
VDD = 400 V, ID = 35 A, VGS = 10 V (see
Figure 15: "Test circuit for gate charge
- 13.3 -
nC
behavior")
Qgd Gate-drain charge
-
28
-
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
Symbol Parameter
td(on)
Turn-on
delay time
tr
Rise time
td(off)
Turn-off
delay time
tf
Fall time
Table 7: Switching times
Test conditions
Min. Typ. Max. Unit
-
20
-
VDD = 250 V, ID = 17.5 A RG = 4.7 Ω,
VGS = 10 V (see Figure 14: "Test circuit for
- 9.4
resistive load switching times" and Figure 19:
-
ns
"Switching time waveform")
- 73.5 -
- 9.8 -
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