STB45N50DM2AG Datasheet, PDF (3/15 Pages) STMicroelectronics – Fast-recovery body diode

STB45N50DM2AG
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VGS
ID
IDM⁽¹⁾
PTOT
dv/dt⁽²⁾
dv/dt⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature
Operating junction temperature
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{ISD ≤ 35 A, di/dt=800 A/μs; VDS peak < V(BR)DSS,VDD = 80% V(BR)DSS.}
(3) _{VDS ≤ 400 V.}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1) _{When mounted on a 1-inch² FR-4, 2 Oz copper board.}
Symbol
IAR⁽¹⁾
EAS⁽²⁾
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Notes:
(1)_{pulse width limited by Tjmax.}
(2) _{starting Tj = 25 °C, ID = IAR, VDD = 50 V.}
Electrical ratings
Value
±25
35
22
140
250
50
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
0.50
30
Unit
°C/W
Value
Unit
7
A
900
mJ
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