STB23NM60ND Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh™ II Power MOSFET

Electrical characteristics
STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 1 mA, V_GS= 0
600
V
dv/dt⁽¹⁾
Drain-source voltage slope
V_DD = 480 V,I_D = 20 A,
V_GS = 10 V
30
V/ns
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating,@125 °C
1 µA
100 µA
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20 V
100 nA
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
3
4
5
V
R_DS(on)
Static drain-source on
resistance
V_GS= 10 V, I_D= 10 A
0.150 0.180 Ω
1. Characteristic value at turn off on inductive load
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs(1)
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =15 V, I_D= 10 A
V_DS = 50 V, f =1 MHz,
V_GS = 0
17
S
2050
pF
140
pF
8
pF
C_oss
(2)
eq.
Equivalent output
capacitance
V_GS = 0, V_DS = 0 to 480 V
260
pF
f=1 MHz Gate DC Bias=0
Rg Gate input resistance
Test signal level=20 mV
4
Ω
open drain
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 480 V, I_D = 20 A
V_GS = 10 V
(see Figure 3)
60
nC
10
nC
30
nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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