STB23NM60ND Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh™ II Power MOSFET

STB23NM60ND-STF23NM60ND
STI23NM60ND-STP/W23NM60ND
N-channel 600 V - 0.150 Ω - 20 A - D²/I²PAK - TO-220/FP - TO-247
FDmesh™ II Power MOSFET (with fast diode)
Preliminary Data
Features
Type
STB23NM60ND
STI23NM60ND
STF23NM60ND
STP23NM60ND
STW23NM60ND
V_DSS
(@T_jmax)
650 V
650 V
650 V
650 V
650 V
R_DS(on) max I_D
< 0.180 Ω
< 0.180 Ω
< 0.180 Ω
< 0.180 Ω
< 0.180 Ω
20 A
20 A
20 A⁽¹⁾
20 A
20 A
1. Limited by wire bonding
■ The worldwide best R_DS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
Application
■ Switching applications
3
1
D²PAK
3
2
1
TO-220
123
I²PAK
3
2
1
TO-247
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
Package
Packaging
STB23NM60ND
23NM60ND
D²PAK
Tape & reel
STI23NM60ND
23NM60ND
I²PAK
Tube
STF23NM60ND
23NM60ND
TO-220FP
Tube
STP23NM60ND
23NM60ND
TO-220
Tube
STW23NM60ND
23NM60ND
TO-247
Tube
January 2008
Rev 1
1/15
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
15