STB23NM60ND Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh™ II Power MOSFET

STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS=0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
T_stg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T_C = 25 °C)
Storage temperature
T_j
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 20 A, di/dt ≤ 600 A/µs, V_DD =80% V_(BR)DSS
Value
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
Unit
600
V
± 25
V
20
20 ⁽¹⁾
A
12.6
12.6 ⁽¹⁾
A
80
80 ⁽¹⁾
A
150
35
W
40
V/ns
--
2500
V
-55 to 150
°C
150
°C
Table 3. Thermal data
Symbol
Parameter
D²PAK/I²PAK
TO-220
TO-247
TO-220FP
Unit
Rthj-case Thermal resistance junction-case max
0.83
Rthj-amb Thermal resistance junction-amb max
62.5
3.6
°C/W
50
62.5 °C/W
T_l
Maximum lead temperature for
soldering purposes
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting T_j= 25 °C, I_D = I_AS, V_DD = 50 V)
Max value
Unit
9
A
700
mJ
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