STB180N55 Datasheet, PDF (4/11 Pages) STMicroelectronics – N-CHANNEL 55V - 2.9m-ohm - 120A - D-2 PAK - TO-220 MDmesh-TM Low Voltage Power MOSFET

2 Electrical characteristics
STP180N55 - STB180N55
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on Delay Time
Rise Time
t_d(off)
t_f
Off voltage Rise Time
FallTime
Test Conditions
V_DD=27V, I_D= 60A,
R_G=4.7Ω, V_GS=10V
(see Figure 3)
V_DD=27V, I_D= 60A,
R_G=4.7Ω, V_GS=10V
(see Figure 3)
Min.
Table 6. Source drain diode
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM Note 2 Source-drain Current (pulsed)
V_SDNote 3 Forward on Voltage
I_SD=120A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD=120A, di/dt = 100A/µs,
V_DD=30V, Tj=150°C
Min.
Typ. Max. Unit
TBD
ns
TBD
ns
TBD
ns
TBD
ns
Typ.
TBD
TBD
TBD
Max.
120
480
1.5
Unit
A
A
V
ns
nC
A
(1) Current limited by package
(2) Pulse width limited by safe operating area
(3) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(4) Starting Tj=25°C, Id=60A, Vdd=40V
(5) When mounted o inch² FR4 2oz Cu
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