STB180N55 Datasheet, PDF (3/11 Pages) STMicroelectronics – N-CHANNEL 55V - 2.9m-ohm - 120A - D-2 PAK - TO-220 MDmesh-TM Low Voltage Power MOSFET

STP180N55 - STB180N55
2 Electrical characteristics
2 Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
V_(BR)DSS
Drain-Source Breakdown
Voltage
I_DSS
Zero Gate Voltage Drain
Current (V_GS = 0)
I_GSS
V_GS(th)
Gate Body Leakage Current
(V_DS = 0)
Gate Threshold Voltage
R_DS(on)
Static Drain-Source On
Resistance
Test Conditions
Min.
I_D = 250µA, V_GS= 0
55
V_DS = Max Rating,
V_DS = Max Rating,Tc = 125°C
V_GS = ±20V
V_DS= V_GS, I_D = 250µA
2
V_GS= 10V, I_D= 60A D²PAK
TO-220
Typ.
Max.
10
100
±200
4
3.5
3.8
Unit
V
µA
µA
nA
V
mΩ
mΩ
Table 4. Dynamic
Symbol
Parameter
Test Conditions
g_fs Note 3
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Forward Transconductance V_DS =15V, I_D = 60A
Input Capacitance
Output Capacitance
V_DS =25V, f=1 MHz, V_GS=0
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DD=44V, I_D = 120A
V_GS =10V
(see Figure 2)
Min. Typ. Max. Unit
TBD
S
6200
pF
1800
pF
100
pF
110 TBD
nC
TBD
nC
TBD
nC
3/11