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STB180N55 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 55V - 2.9m-ohm - 120A - D-2 PAK - TO-220 MDmesh-TM Low Voltage Power MOSFET
STB180N55
STP180N55
N-CHANNEL 55V - 2.9mΩ - 120A - D²PAK - TO-220
MDmesh™ Low Voltage Power MOSFET
TARGET SPECIFICATION
General features
Type
STB180N55
STP180N55
VDSS
55V
55V
RDS(on)
3.5mΩ
3.8mΩ
ID
120A (Note 1)
120A (Note 1)
■ ULTRA LOW ON-RESISTANCE
■ 100% AVALANCHE TESTED
Description
This N-Channel enhancement mode MOSFET is
the latest refinement of STMicroelectronic unique
“Single Feature Size™“ strip-based process with
less critical aligment steps and therefore a
remarkable manufacturing reproducibility. The
resulting transistor shows extremely high packing
density for low on-resistance, rugged avalanche
characteristics and low gate charge.
Applications
■ HIGH CURRENT SWITCHING APPLICATION
3
1
D²PAK
3
2
1
TO-220
Internal schematic diagram
Order codes
Sales Type
STB180N55
STP180N55
Marking
B180N55
P180N55
Package
D²PAK
TO-220
Packaging
TAPE & REEL
TUBE
January 2006
This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice
Rev 1
1/11
www.st.com
11