STB11NM80_07 Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh™ Power MOSFET

Electrical characteristics
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250 µA, V_GS= 0
800
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating @125°C
10 µA
100 µA
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±30 V
100 nA
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
3
4
5
V
R_DS(on)
Static drain-source on
resistance
V_GS= 10 V, I_D= 5.5 A
0.35 0.40 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
Forward transconductance
V_DS > I_D(on) x R_DS(on)max,
I_D= 7.5A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =25 V, f=1 MHz,
V_GS=0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=640 V, I_D = 11 A
V_GS =10 V
(see Figure 10)
R_g Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD=400 V, I_D= 5.5 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 17)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
8
S
1630
pF
750
pF
30
pF
43.6
nC
11.6
nC
21
nC
2.7
Ω
22
ns
17
ns
46
ns
15
ns
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