STB11NM80_07 Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh™ Power MOSFET

STB11NM80 - STF11NM80
STP11NM80 - STW11NM80
N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D²PAK - TO-247
MDmesh™ Power MOSFET
Features
Type
V_DSS
STB11NM80 800 V
STF11NM80 800 V
STP11NM80 800 V
STW11NM80 800 V
R_DS(on) R_DS(on)*Q_g I_D
< 0.40 Ω 14Ω*nC 11 A
< 0.40 Ω 14Ω*nC 11 A
< 0.40 Ω 14Ω*nC 11 A
< 0.40 Ω 14Ω*nC 11 A
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best R_DS(on) *Qg in the industry
Application
■ Switching applications
Description
The MDmesh™ associates the multiple drain
process with the Company’s PowerMesh™
horizontal layout assuring an outstanding low on-
resistance. The adoption of the Company’s
proprietary strip technique yields overall dynamic
performance that is significantly better than that of
similar competition’s products.
TO-247
3
1
D²PAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB11NM80
STF11NM80
STP11NM80
STW11NM80
Marking
B11NM80
F11NM80
P11NM80
W11NM80
Package
D²PAK
TO-220FP
TO-220
TO-247
December 2007
Rev 9
Packaging
Tape & reel
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