STB11NM80_07 Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh™ Power MOSFET

STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25°C
I_D
I_DM(2)
Drain current (continuous) at T_C=100°C
Drain current (pulsed)
P_TOT
Total dissipation at T_C = 25°C
Derating factor
V_ISO Insulation withstand voltage (DC)
T_J
Operating junction temperature
T_stg
Storage temperature
1. Limited only by the maximum temperature allowed
2. Pulse width limited by safe operating area
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-a
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
TO-220/D²PAK/
Unit
TO-220FP
TO-247
800
±30
11
8
44
150
1.2
--
11 ⁽¹⁾
8 ⁽¹⁾
44 ⁽¹⁾
35
0.28
2500
V
V
A
A
A
W
W/°C
V
-65 to 150
°C
Value
TO-220/D²PAK/
Unit
TO-220FP
TO-247
0.83
3.6 °C/W
62.5
°C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AS
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, Id=Iar, Vdd=50 V)
Value
Unit
2.5
A
400
mJ
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