START499D Datasheet, PDF (4/18 Pages) STMicroelectronics – NPN RF silicon transistor

Electrical characteristics
2
Electrical characteristics
START499D
2.1
Static
Table 4.
Symbol
Static T_CASE = +25 ^oC
Test conditions
I_CBO
I_EBO
BV_CES
h_FE
V_CB = 15 V
V_EB = 1.2 V
I_C = 200 µA
V_CE = 3 V
I_C = 0.16 A
Min. Typ. Max. Unit
5 µA
250 µA
15 20
V
150
2.2
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min. Typ. Max. Unit
P_OUT
28 29
G_P
V_CC = 3.6 V, I_CQ = 30 mA, P_IN = 15 dBm, f = 900 MHz
13 14
h_D
55 65
Load V_CC = 3.6 V, I_CQ = 30 mA, P_OUT = 28 dBm, f = 900 MHz _3:1
mismatch All phase angles
dBm
dB
%
VSWR
4/18
Doc ID 14496 Rev 4