START499D Datasheet, PDF (1/18 Pages) STMicroelectronics – NPN RF silicon transistor

START499D
NPN RF silicon transistor
Features
■ High efficiency
■ Common emitter configuration
■ Broadband performances P_OUT = 29 dBm with
14 dB gain @ 900 MHz
■ Plastic package
■ Linear and non linear operation
■ Supplied in tape and reel
■ In compliance with the 2002/95/EC european
directive
Description
The START499D provide the market with a Si
state-of-art RF process. Manufactured with ST 3^rd
generation bipolar process, it offers the highest
power, gain and efficiency in SOT-89 for given
breakdown voltage (BVCEo). START499D is
suitable for a wide range of application up to 1
GHz.
SOT-89
Figure 1. Pin connection
Emitter
Emitter
Base
Collector
Table 1. Device summary
Order code
START499D
Marking
D499
Package
SOT-89
Packaging
Tape and reel
June 2010
Doc ID 14496 Rev 4
1/18
www.st.com
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