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SD56120C Datasheet, PDF (4/15 Pages) STMicroelectronics – Excellent thermal stability
◁
Electrical characteristics
2
Electrical characteristics
SD56120C
2.1
Note:
TCASE = +25 oC
Static
Table 4. Static (per section)
Symbol
Test conditions
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS(ON)
GFS
CISS
COSS
CRSS
VGS = 0 V
VGS = 0 V
VGS = 20 V
VDS = 28 V
VGS = 10 V
VDS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
IDS = 1 mA
VDS = 28 V
VDS = 0 V
ID = 200 mA
ID = 3 A
ID = 3 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
REF. 7194566A
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min Typ Max Unit
72
V
1
µA
1
µA
3.0
5.0 V
0.7 0.8 V
3
mho
82
pF
48
pF
2.8
pF
2.2
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min Typ Max Unit
POUT VDD = 28 V IDQ = 400 mA f = 860 MHz
100
GPS VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz 14 16
ηD
VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz 50 60
-
IMD (1) VDD = 28 V IDQ = 400 mA POUT = 100 W PEP
-28
Load VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz 5:1
mismatch All phase angles
Input
overdrive VDD = 28 V IDQ = 400 mA PIN = 10 W f = 860 MHz
(2)
Must survive
W
dB
%
dBC
VSWR
Note: 1 PEP f1 = 860 MHz f2 = 860.1 MHz
2 Overdrive test done at wafer sampling only.
4/15
Doc ID 15742 Rev 3
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