SD56120C Datasheet, PDF (1/15 Pages) STMicroelectronics – Excellent thermal stability

SD56120C
RF power transistor, the LdmoST family
Features
■ Excellent thermal stability
■ Common source configuration Push-pull
■ P_OUT = 100 W with 14 dB gain @ 860 MHz
■ BeO-free package
Description
The SD56120C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD56120C is designed for high
gain and broadband performance operating in
common source mode at 28 V. It is ideal for
broadcast applications from 470 to 860 MHz
requiring high linearity.
M246
Epoxy sealed
Figure 1. Pin connections
1
2
Table 1.
Device summary
Order code
SD56120C
5
1-2 Drain
4-5 Gate
4
3 Source
Package
M246
Branding
SD56120
September 2009
Doc ID 15742 Rev 3
1/15
www.st.com
15