SD2900 Datasheet, PDF (4/8 Pages) STMicroelectronics – RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

SD2900
TYPICAL PERFORMANCE
Output Power vs Input Power
Output Power vs Input Power
8
6
Tc= 2 5° C
f = 40 0 MHz
IDQ = 50 mA
4
2
GC8 31 80
Vdd = 28 V
Vdd = 13 .5 V
0
10
50
90
13 0
17 0
210
250
Pin, INPUT POWER (mW)
10
IDQ = 50 mA
8
VDD = 28 V
f = 400 MHz
6
4
T = 25º C
GC8 31 70
T = -20ºC
T = 80ºC
2
0
0.01
0 .06
0.10
0.15
0 .19
0.24
Pin, INPUT POWER (W)
Output Power vs Voltage Supply
8
6
IDQ = 50 mA
f = 40 0 MHz
4
2
GC8 31 90
Pi n =0 .24 W
Pi n = 0.12 W
Pin =0 .06 W
0
13
18
23
28
VDD, SUP PLYVOLTAGE (VOLTS)
Output Power vs Gate Voltage
6
VDD = 28 V
4
IDQ = 50 mA
f = 400 MHz
Pi n = Co ns tant
2
T = 25° C
GC832 00
T = -20° C
T = 80° C
0
1.5
3
4.5
6
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Power Gain vs Output Power
18
GC83210
17
16
Tc= 25°C
f = 400 MHz
IDQ = 50 m A
15
14
0
1
2
3
4
5
6
7
8
Pout, OUTPUT POWER(W)
Efficiency vs Output Power
70
60
50
40
30
20
10
0
GC83 2 20
Tc= 2 5 °C
f = 40 0 MHz
IDQ = 5 0 mA
2
4
6
8
Pout, OUTPUT POWER (W)
4/8