SD2900 Datasheet, PDF (3/8 Pages) STMicroelectronics – RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

SD2900
TYPICAL PERFORMANCE
Capacitance vs Drain-Source Voltage
GC83130
100
f = 1 MHz
Ciss
10
Coss
Crss
1
0
10
20
30
VDS. DRAIN-SOURCE VOLTAGE (VOLTS)
Maximum Thermal Resistance vs Case
Temperature
10
9.5
9
8.5
8
7.5
25
GC83 14 0
45
65
85
Tc, CASE TEMPERATURE (ºC)
Drain Current vs Gate Voltage
Gate-Source Voltages vs Case Temperature
100 0
800
600
400
200
0
5
VDS = 10V
GC83 15 0
T = -20 °C
T = 25 °C
T = 80 °C
6
7
8
9
10
VGS, GATE-SOURCE VOLTAGE (VOLTS)
1 .04
1 .02
1
0 .98
0 .96
V DD = 1 0 V
I D = 1 00 m A
0 .94
-25
0
25
50
Tc, CASE TEMPERATURE (ºC)
GC83 160
ID = 7 50 mA
ID = 5 00 mA
I D = 2 00 m A
ID = 5 0 mA
75
1 00
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