SD2900 Datasheet, PDF (1/8 Pages) STMicroelectronics – RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

®
SD2900
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
s GOLD METALLIZATION
s COMMON SOURCE CONFIGURATION
s 2 - 500 MHz
s 5 WATTS
s 28 VOLTS
s 13.5 dB MIN. AT 400 MHz
s CLASS A OR AB OPERATION
s EXCELLENT THERMAL STABILITY
DESCRIPTION
The SD2900 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
M113
epoxy sealed
ORDER CODE
BRANDING
SD2900
SD2900
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS (T_case = 25 ^oC)
S ym b o l
V(BR)DSS
V_DGR
VGS
I_D
P DISS
T_j
TSTG
Parameter
Drain Source Voltage
Drain-Gate Voltage (R_GS = 1MΩ)
Gate-Source Voltage
Drain Current
Power Dissipation
Max. O perating Junction Temperature
Storage Temperature
1. Drain
2. Source
3.Gate
4. Source
Value
65
65
±20
900
21. 9
200
-65 to 150
Uni t
V
V
V
mA
W
o_C
o_C
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
R_th(c-s) Case-Heatsink Thermal Resistance ∗
8.0
0.30
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
o_{C/ W}
o_{C/ W}
November 1999
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