English
Language : 

PD85025C Datasheet, PDF (4/10 Pages) STMicroelectronics – RF power transistor - LdmoST family
◁
Electrical characteristics
2
Electrical characteristics
PD85025C
2.1
TCASE = +25 oC
Static
Table 4. Static
Symbol
IDSS
IGSS
VGS(Q)
VDS(ON)
CISS
COSS
CRSS
VGS = 0 V
VGS = 20 V
VDS = 10 V
VGS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Test conditions
VDS = 25 V
VDS = 0 V
ID = TBD mA
ID = 1 A
VDS = 12.5 V
VDS = 12.5 V
VDS = 12.5 V
Min Typ Max Unit
f = 1 MHz
f = 1 MHz
f = 1 MHz
1 µA
1 µA
TBD
V
270 310 mV
49
pF
35
pF
1.0
pF
2.2
2.3
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min. Typ. Max. Unit
P3dB VDD = 13.6 V, IDQ = 300 mA
f = 945 MHz 25
GP
VDD = 13.6 V , IDQ = 300 mA, POUT = 10 W, f = 945 MHz 15
hD
VDD = 13.6 V, IDQ = 300 mA, POUT = P3dB, f = 945 MHz 60
Load VDD = 17 V, IDQ = 300 mA, POUT = 45 W, f = 945 MHz
mismatch All phase angles
20:1
30
17.5
73
W
dB
%
VSWR
ESD protection characteristics
Table 6.
ESD protection characteristics
Test conditions
Human body model
Machine model
Class
2
M3
4/10
 ▷