PD85025C Datasheet, PDF (1/10 Pages) STMicroelectronics – RF power transistor - LdmoST family

PD85025C
RF power transistor - LdmoST family
Preliminary Data
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 25 W with 16 dB gain @ 945 MHz /
13.6 V
■ BeO free package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
M243
Epoxy sealed
Description
The PD85025C is a common source
N-channel, enhancement-mode lateral Field-
Effect RF power transistor. It is designed for high
gain, broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at frequencies of up to 1 GHz.
PD85025C boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology.
PD85025C’s superior linearity performance
makes it an ideal solution for mobile application.
Figure 1. Pin connection
1
3
2
1. Drain
2. Gate
3. Source
Table 1.
Device summary
Order code
PD85025C
Package
M243
Packing
Box
December 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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