E-L6202 Datasheet, PDF (4/20 Pages) STMicroelectronics – DMOS FULL BRIDGE DRIVER

L6201 - L6202 - L6203
THERMAL DATA
Symbol
Parameter
Rt_{h j-pins}
Rt_{h j-case}
Rt_{h j-amb}
Thermal Resistance Junction-pins
Thermal Resistance Junction Case
Thermal Resistance Junction-ambient
max
max.
max.
L6201
15
–
85
Value
L6201PS L6202
–
12
–
–
13 (*)
60
L6203
–
3
35
Unit
°C/W
(*) Mounted on aluminium substrate.
ELECTRICAL CHARACTERISTICS (Refer to the Test Circuits; T_j = 25°C, V_S = 42V, V_sens = 0, unless
otherwise specified).
Symbol
V_s
V_ref
I_REF
Is
Parameter
Supply Voltage
Reference Voltage
Output Current
Quiescent Supply Current
f_c
Commutation Frequency (*)
T_j
Thermal Shutdown
T_d
Dead Time Protection
TRANSISTORS
Test Conditions
I_REF = 2mA
EN = H VIN = L
EN = H V_IN = H
EN = L ( Fig. 1,2,3)
I_L = 0
Min. Typ. Max. Unit
12
36
48
V
13.5
V
2
mA
10
15
mA
10
15
mA
8
15
mA
30
100 KHz
150
°C
100
ns
OFF
IDSS
ON
R_DS
V_DS(ON)
Leakage Current
On Resistance
Drain Source Voltage
V_sens
Sensing Voltage
SOURCE DRAIN DIODE
Fig. 11 Vs = 52 V
1
mA
Fig. 4,5
Fig. 9
IDS = 1A
I_DS = 1.2A
I_DS = 3A
0.3 0.55
Ω
L6201
0.3
V
L6202
0.36
V
L6201PS/0
0.9
V
3
–1
4
V
Vsd
Forward ON Voltage
Fig. 6a and b
I_SD = 1A L6201
EN = L
0.9 (**)
V
I_SD = 1.2A L6202
EN = L
0.9 (**)
V
ISD = 3A L6201PS/03 EN =
1.35(**)
V
L
trr
Reverse Recovery Time
dif
dt
=
25
A/µs
300
ns
IF = 1A
I_F = 1.2A
I_F = 3A
L6201
L6202
L6203
t_fr
Forward Recovery Time
200
ns
LOGIC LEVELS
V_{IN L}, V_{EN L}
V_{IN H}, V_{EN H}
I_{IN L}, I_{EN L}
I_{IN H}, I_{EN H}
Input Low Voltage
Input High Voltage
Input Low Current
Input High Current
V_IN, V_EN = L
V_IN, V_EN = H
– 0.3
0.8
V
2
7
V
–10
µA
30
µA
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