AIS1120SX Datasheet, PDF (36/58 Pages) STMicroelectronics – Embedded self-test

Mechanical and electrical specifications
AIS1120SX / AIS2120SX
4
Mechanical and electrical specifications
4.1
Mechanical characteristics
3.13 V  V_DD  3.47 V, -40°C  T_OP  105°C, acceleration = 0 g, over lifetime, unless
otherwise noted.
Table 32. Mechanical characteristics
Symbol
Parameter
Test conditions
Min.
FS
Full-scale range⁽¹⁾
Offset cancellation ON
±114
S₀
Sensitivity
S_E
Sensitivity Error
V_DD = 3.3 V
T = 25°C
Frequency = 0 Hz
-5
At time t = 0
Including ratiometric error
S_RE
Sensitivity ratiometricity error
V_DD = 3.6 V to PD
threshold
-1
TCS_o
Sensitivity change vs
temperature
-40°C  T_OP  105°C
S_O_drift Sensitivity drift
DNL Differential non linearity
Over lifetime
Off_Raw₁ Zero-g level offset⁽²⁾
Including ratiometric
error, excluding noise
effects, offset cxl disabled
-680
Off_Cxl₁ Zero-g level offset
Including ratiometric
error, excluding noise
-2
effects, offset cxl enabled
Off_Mon_
Th
Offset monitor threshold
Signed value
-1020
Off_Mon_
HdD
Offset monitor Headroom
NL
Non linearity of sensitivity⁽¹⁾
CrAx Cross axis⁽¹⁾
Best fit straight line
Package alignment error
-400
-5
Cut_Off MEMS cutoff frequency (-3 dB)
13.7
F₀
Gclip
MEMS resonant frequency
g-cell clipping
10.25
951
T_op
Operating temperature range
-40
1. Guaranteed by design, verified at characterization level
2. 14-bit data, equivalent to ±170 LSB on 12 bits
Typ.
±120
68
±0.02
15.86
11.34
1108
Max.
Unit
g
LSB/g
+5
%
+1
%
LSB/g/°C
1
%
4
LSB
680
LSB
2
LSB
1020 LSB
400
+2
+5
18.94
12.45
1231
+105
LSB
% FS
%
kHz
kHz
g
°C
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