STTH1302CT_03 Datasheet, PDF (3/7 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

STTH1302CT/CG/CFP
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(AV)(W)
8
7
6
5
4
3
2
1
0
0
1
δ = 0.05
δ = 0.1 ^{δ = 0.2}
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
2
3
4
5
6
7
8
Fig. 2: Peak current versus factor (per diode).
IM(A)
60
50
40
IM
T
δ=tp/T
tp
30
P=10W
P=5W
20
P=2W
10
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 3: Forward voltage drop versus forward cur-
rent (per diode).
IFM(A)
100.0
Tj=125°C
Typical values
10.0
Tj=125°C
Maximum values
1.0
Tj=25°C
Maximum values
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Fig. 4-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB /
D²PAK).
Zth(j-c) / Rth(j-c)
1.0
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
0.1
1.E-03
1.E-02
tp(s)
T
1.E-01
δ=tp/T
tp
1.E+00
Fig. 4-2: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220FPAB).
Zth(j-c) / Rth(j-c)
1.0
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
0.1
1.E-02
1.E-01
tp(s)
T
δ=tp/T
1.E+00
tp
1.E+01
Fig. 5-1: Non repetitive surge peak forward cur-
rent versus overload duration per diode
(TO-220AB / D²PAK).
IM(A)
100
90
80
70
60
50
40
30
20 _IM
10
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TC=25°C
TC=75°C
TC=125°C
1.E+00
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