STTH1302CT_03 Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

STTH1302CT/CG/CFP
THERMAL RESISTANCES
Symbol
R_{th (j-c)} Junction to case
R_{th (c)} Coupling
Parameter
TO-220AB / D²PAK
TO-220FPAB
TO-220AB / D²PAK
TO-220FPAB
TO-220AB / D²PAK
TO-220FPAB
Per diode
Total
Value
3
5.5
1.9
4.5
0.8
3.5
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R_th(j-c)(Per diode) + P(diode 2) x R_th(c)
Unit
°C/W
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
I_R *
V_F**
Parameter
Reverse leakage Current
Forward Voltage drop
Tests Conditions
Tj = 25°C
V_R = V_RRM
Tj = 125°C
Tj = 25°C
I_F = 6.5 A
Tj = 125°C I_F = 6.5 A
Tj = 25°C
I_F = 13 A
Tj = 125°C I_F = 13 A
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.80 x IF(AV) + 0.023 x IF2(RMS)
Min. Typ. Max. Unit
6
µA
3
60
1.1
V
0.81 0.95
1.25
0.95 1.1
DYNAMIC CHARACTERISTICS (per diode)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
trr
Reverse recovery time
Tj = 25°C I_F = 0.5 A
Irr = 0.25 A
I_R = 1 A
16 25 ns
tfr
Forward recovery time
Tj = 25°C I_F = 6.5 A
70
ns
dI_F/dt = 100 A/µs
V_FR = 1.1 x V_F max
V_FP Forward recovery voltage Tj = 25°C I_F = 6.5 A
2.2
V
dI_F/dt = 100 A/µs
2/7