STTH1302CT_03 Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

®
STTH1302CT/CG/CFP
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
2 x 6.5 A
200 V
175 °C
V_F (max)
trr (max)
0.95 V
25 ns
FEATURES AND BENEFITS
s Suited for SMPS
s Low losses
s Low forward and reverse recovery times
s High surge current capability
s High junction temperature
s Insulated package: TO-220FPAB:
Insulation voltage = 2000 V_DC
Capacitance = 12 pF
DESCRIPTION
Dual center tap rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters.
This device is especially intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
A1
K
A2
K
A2
A1K
TO-220AB
STTH1302CT
K
A2
A1
D²PAK
STTH1302CG
A2
K
A1
TO-220FPAB
STTH1302CFP
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
T_stg
Tj
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward
current δ = 0.5
TO-220AB /
D²PAK
Tc = 155°C Per diode
Tc = 145°C Per device
TO-220FPAB Tc = 135°C Per diode
Tc = 110°C Per device
Surge non repetitive forward current tp = 10 ms sinusoïdal
Storage temperature range
Maximum operating junction temperature
Value Unit
200
V
20
A
6.5
A
13
6.5
A
13
70
A
- 65 to + 175 °C
175
°C
October 2003 - Ed: 2A
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