STE180N10 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET

STE180N10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 50 V
ID = 90 A
R_G = 4.7 Ω
V_GS = 10 V
(Resistive Load, see fig. 3)
V_DD = 80 V I_D = 180 A V_GS = 10 V
Min.
Typ.
65
230
485
90
210
Max.
680
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_d(on)
tr
P ar am et e r
Turn-off Delay Time
Fall Time
t_{r (Voff)}
t_f
t_c
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 50 V
I_D = 90 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
V_DD = 80 V
I_D = 180 A
R_G = 4.7 Ω
V_GS = 10 V
(Induct ive Load, see fig. 5)
Min.
Typ.
280
100
100
170
260
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I_SD
I_SDM (•)
V_SD (∗)
t_rr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
I_SD = 180 A V_GS = 0
I_SD = 180 A
V_DD = 50 V
di/dt = 100 A/µs
T_j = 150 ^oC
(see test circuit, fig. 5)
Min.
Typ.
Max.
180
540
1.5
250
1875
15
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8