STE180N10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET

®
STE180N10
N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP
POWER MOSFET
TYPE
V _DSS
R_DS(on)
STE180N10
100 V < 7 mΩ
s TYPICAL RDS(on) = 5.5 mΩ
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
I_D
180 A
INDUSTRIAL APPLICATIONS:
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_DS
V _DGR
V_GS
I_D
ID
Drain-source Volt age (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM(•)
P_tot
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
VISO I nsulation Withstand Voltage (AC-RMS)
T_{s tg} Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
February 1999
Value
Un it
100
V
100
V
± 20
V
180
A
119
A
540
A
450
W
3 .6
W /^o C
2500
-55 to 150
150
( 1) ISD ≤180 Α, di/dτ ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V
o_C
o_C
1/8