STE180N10 Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET

STE180N10
THERMAL DATA
R_thj-case
R_thc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With conductive
Grease Applied
Max
Max
0.27
0.05
o_C/W
o_C/W
AVALANCHE CHARACTERISTICS
Symbo l
I_AR
E_AS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 25 V)
Max Value
60
720
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symbo l
V _{(BR)D SS}
I_DSS
I_GSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
I_D = 1 mA V_GS = 0
Zero Gate Voltage
V_DS = Max Rat ing
Drain Current (V_GS = 0) V_DS = Max Rat ing T_c = 125 ^oC
Gate-body Leakage
Current (VDS = 0)
V_GS = ± 20 V
Min.
100
Typ.
Max.
Unit
V
50
µA
500
µA
± 400 nA
ON (∗)
Symbo l
V_GS(th)
R_DS(on)
I_{D(o n)}
P ar am et e r
Test Conditions
Gat e Threshold Voltage V_DS = V_GS I_D = 250 µA
Static Drain-source On V_GS = 10 V I_D = 90 A
Resistance
On State Drain Current V_DS > I_{D(o n)} x R_{DS(on )max}
V_GS = 10 V
Min.
2
Typ.
3
5.5
Max.
4
7
Unit
V
mΩ
180
A
DYNAMIC
Symbo l
g_fs (∗)
C_iss
C_oss
C_rss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_{D(o n)} x R_{DS(on )ma x} I_D = 90 A
Min.
70
Typ.
Max.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
18
nF
4
nF
0.5
nF
2/8