STE110NS20FD Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 200V - 0.022W - 110A ISOTOP MESH OVERLAY™ Power MOSFET

STE110NS20FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 100V, I_D = 50A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
V_DD = 100V, I_D = 100A,
V_GS = 10V
Q_gd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
Off-voltage Rise Time
t_f
Fall Time
t_c
Cross-over Time
Test Conditions
V_DD = 100V, I_D = 100A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 100A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 100A, di/dt = 100A/µs,
V_DD = 160V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
40
ns
130
ns
360
504
nC
35
nC
135
nC
Min. Typ. Max. Unit
245
ns
140
ns
220
ns
Min. Typ. Max. Unit
110
A
440
A
1.6
V
225
ns
1.35
µC
12
A
Safe Operating Area
Thermal Impedance
3/8