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| STE110NS20FD Datasheet, PDF (2/8 Pages) STMicroelectronics – N-CHANNEL 200V - 0.022W - 110A ISOTOP MESH OVERLAY™ Power MOSFET | |||
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STE110NS20FD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.25
Rthj-amb Thermal Resistance Junction-ambient
Max
30
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
110
750
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
200
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
10
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
100
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 50A
Min.
3
Typ.
4
0.022
Max.
5
0.024
Unit
V
â¦
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1)
Ciss
Coss
Crss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS > ID(on) x RDS(on)max,
ID = 50A
VDS = 25V, f = 1 MHz, VGS = 0
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
30
7900
1500
460
Max.
Unit
S
pF
pF
pF
2/8
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