STD60NH03L Datasheet, PDF (3/12 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0075 W - 60A DPAK/IPAK STripFET III POWER MOSFET

STD60NH03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 15 V
I_D = 30 A
21
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 5 V
95
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD= 15 V I_D= 60 A V_GS= 5 V
15.7
21
nC
8.3
nC
3.4
nC
Q_gls(4) Third-quadrant Gate Charge VDS< 0 V
V_GS= 10 V
15
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 15 V
I_D = 30 A
R_G = 4.7Ω,
V_GS = 5 V
(Resistive Load, Figure 3)
Min.
Typ.
19
15
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
I_SD
I_SDM
Source-drain Current
Source-drain Current (pulsed)
60
A
240
A
V_SD
Forward On Voltage
I_SD = 30 A
V_GS = 0
1.4
V
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(1) _{Pulse width limited by safe operating area}
(²) Starting T_j = 25 ^oC, I_D = 30A, V_DD = 20V
.
.
I_SD = 60 A
di/dt = 100A/µs
32
ns
V_DD = 20 V
T_j = 150°C
51
nC
(see test circuit, Figure 5)
3.2
A
(3) _{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(4) _{Gate charge for synchronous operation . See Appendix A}
Safe Operating Area
Thermal Impedance
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