STD60NH03L Datasheet, PDF (2/12 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0075 W - 60A DPAK/IPAK STripFET III POWER MOSFET

STD60NH03L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.14
Rthj-amb Thermal Resistance Junction-ambient
Max
100
Rthj-pcb Thermal Resistance Junction-pcb^(#)
Max
43
T_l
Maximum Lead Temperature For Soldering Purpose
275
°C/W
°C/W
°C/W
°C
(#) _{When Mounted on 1 inch}2 _{FR-4 board, 2 oz of Cu.}
ELECTRICAL CHARACTERISTICS (T_CASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
30
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20V
±100
nA
ON ⁽⁴⁾
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
V_GS = 5 V
I_D = 30 A
I_D = 30 A
Min.
1
Typ. Max.
0.0075 0.009
0.009 0.017
Unit
V
Ω
Ω
DYNAMIC
Symbol
g_fs ⁽⁴⁾
C_iss
C_oss
C_rss
R_G
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Test Conditions
V_DS = 15 V
I_D = 18 A
V_DS = 10V f = 1 MHz V_GS = 0
Min.
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
Typ.
25
2200
380
49
1.5
Max.
Unit
S
pF
pF
pF
Ω
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