STD60NH03L Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0075 W - 60A DPAK/IPAK STripFET III POWER MOSFET

STD60NH03L
N-CHANNEL 30V - 0.0075 Ω - 60A DPAK/IPAK
STripFET™ III POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD60NH03L
30 V < 0.009 Ω
60 A
s TYPICAL R_DS(on) = 0.0075 Ω @ 10 V
s TYPICAL R_DS(on) = 0.009 Ω @ 5 V
s R_DS(ON) * Qg INDUSTRY’s BENCHMARK
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DEVICE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
The STD60NH03L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STD60NH03LT4
STD60NH03L-1
MARKING
D60NH03L
D60NH03L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(1)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
October 2003
PACKAGE
TO-252
TO-251
Value
30
30
± 20
60
43
240
70
0.47
300
-55 to 175
PACKAGING
TAPE & REEL
TUBE
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
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