STD5NM60 Datasheet, PDF (3/6 Pages) STMicroelectronics – N-CHANNEL 600V - 0.8ohm - 5A DPAK MDmesh Power MOSFET

STD5NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 300V, I_D = 2.5A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 400V, I_D = 5A,
V_GS = 10V
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
Off-voltage Rise Time
t_f
Fall Time
t_c
Cross-over Time
Test Condit ions
V_DD = 480V, I_D = 5A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
Min. Typ. Max. Unit
16
ns
9
ns
13
nC
3
nC
11
nC
Min .
Typ.
20
29
30
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 5A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 5A, di/dt = 100A/µs, V_DD
= 100V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
300
1.8
12
Max.
5
20
1.5
Unit
A
A
V
ns
µC
A
3/6