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| STD5NM60 Datasheet, PDF (2/6 Pages) STMicroelectronics – N-CHANNEL 600V - 0.8ohm - 5A DPAK MDmesh Power MOSFET | |||
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STD5NM60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
2.5
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
Rthc-sink Thermal Resistance Case-sink Typ
0.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
5
400
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.5A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min. Typ. Max. Unit
3
4
5
V
0.8
0.9
â¦
5
A
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 2.5A
Ciss
Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
2.4
412
94
10
Max.
3
Unit
S
pF
pF
pF
â¦
2/6
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