STD5NM60 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 600V - 0.8ohm - 5A DPAK MDmesh Power MOSFET

STD5NM60
N-CHANNEL 600V - 0.8Ω - 5A DPAK
MDmesh™ Power MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STD5NM60
600V
<0.9Ω
5A
s TYPICAL R_DS(on) = 0.8Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)I_SD<5A, di/dt<200A/µs, V_DD<V_(BR)DSS, T_J<T_JMAX
May 2000
Value
600
600
±30
5
3.1
20
50
0.4
6
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/ °C
V/ns
°C
°C
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