STD5NM50 Datasheet, PDF (3/10 Pages) STMicroelectronics – N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh™Power MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 250V, I_D = 2.5A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
V_DD = 400V, I_D = 7.5A
V_GS = 10V
Q_gd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
Off-voltage Rise Time
t_f
Fall Time
t_c
Cross-over Time
Test Conditions
V_DD = 400V, I_D = 5A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
STD5NM50/STD5NM50-1
Min. Typ. Max. Unit
16
ns
8
ns
13
nC
5
nC
6
nC
Min. Typ. Max. Unit
14
ns
6
ns
13
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 7.5A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 5A, di/dt = 100A/µs,
V_DD = 100V, T_j = 25°C
(see test circuit, Figure 5)
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 5A, di/dt = 100A/µs,
V_DD = 100V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
Typ.
185
1.1
11.5
270
1.6
12
Max.
7.5
30
1.5
Unit
A
A
V
ns
µC
A
ns
µC
A
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