STD5NM50 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh™Power MOSFET

STD5NM50
STD5NM50-1
N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK
MDmesh™Power MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD5NM50
STD5NM50-1
500V
500V
<0.8Ω
<0.8Ω
7.5 A
7.5 A
n TYPICAL R_DS(on) = 0.7Ω
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n 100% AVALANCHE TESTED
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
(Add Suffix “-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM (l) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
September 2002
Value
500
500
±30
7.5
4.7
30
100
0.8
15
Unit
V
V
V
A
A
A
W
W/°C
V/ns
– 55 to 150
°C
(1) I_SD ≤ 5A, di/dt ≤ 400A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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