STD5NM50 Datasheet, PDF (2/10 Pages) STMicroelectronics – N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh™Power MOSFET

STD5NM50/STD5NM50-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.25
Rthj-amb Thermal Resistance Junction-ambient
Max
100
T_l
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Max Value
2.5
300
ELECTRICAL CHARACTERISTICS (T_CASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
500
Breakdown Voltage
I_DSS
Zero Gate Voltage
V_DS = Max Rating
1
Drain Current (V_GS = 0)
V_DS = Max Rating, T_C = 125 °C
10
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 2.5A
Min.
3
Typ.
4
0.7
Max.
5
0.8
Unit
V
Ω
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
g_fs (1) Forward Transconductance V_DS = 25V_x, I_D = 2.5A
3.5
S
C_iss
Input Capacitance
V_DS = 25V, f = 1 MHz, V_GS = 0
415
pF
C_oss
Output Capacitance
88
pF
C_rss
Reverse Transfer
Capacitance
12
pF
C_{oss eq.} (2) Equivalent Output
Capacitance
V_GS = 0V, V_DS = 0V to 400V
50
pF
R_G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3
Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS increases from 0 to 80%
VDSS.
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