STD55NH2LL Datasheet, PDF (3/12 Pages) STMicroelectronics – N-CHANNEL 24V - 0.010ohm - 40A DPAK/IPAK ULTRA LOW GATE CHARGE STripFET POWER MOSFET

STD55NH2LL
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
t_d(on)
t_r
Turn-on Delay Time
Rise Time
Q_g
Q_gs
Q_gd
Q_oss(5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Test Conditions
Min. Typ. Max. Unit
V_DD = 10 V
I_D = 20 A
15
ns
R_G = 4.7 Ω V_GS = 4.5 V
56
ns
(Resistive Load, Figure 3)
0.44V ≤ V_DD ≤ 10V, I_D= 40 A
8.7
11
nC
V_GS= 4.5 V
4.2
nC
2.4
nC
V_DS= 16 V
V_GS= 0 V
7.6
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 10 V
I_D = 20 A
R_G = 4.7Ω, V_GS = 10 V
(Resistive Load, Figure 3)
Min. Typ. Max. Unit
13
ns
10
ns
SOURCE DRAIN DIODE
Symbol
Parameter
I_SD
Source-drain Current
I_SDM
Source-drain Current (pulsed)
V_SD ⁽⁴⁾ Forward On Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
(1) _{Garanted when external Rg=4.7 Ω and tf < tfmax.}
(2) _{Pulse width limited by safe operating area}
(³) Starting T_j = 25 ^oC, I_D = 20A, V_DD = 15V
.
Test Conditions
Min. Typ. Max. Unit
40
A
160
A
I_SD = 20 A
V_GS = 0
1.3
V
I_SD = 40 A
di/dt = 100A/µs
32.5
ns
V_DD = 15 V
T_j = 150°C
28
nC
(see test circuit, Figure 5)
1.7
A
(4) _{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(5) _{Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A}
(*) Value limited by wire bonding
Safe Operating Area
Thermal Impedance
3/12