STD55NH2LL Datasheet, PDF (2/12 Pages) STMicroelectronics – N-CHANNEL 24V - 0.010ohm - 40A DPAK/IPAK ULTRA LOW GATE CHARGE STripFET POWER MOSFET

STD55NH2LL
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.5
Rthj-amb Thermal Resistance Junction-ambient
Max
100
T_l
Maximum Lead Temperature For Soldering Purpose
275
ELECTRICAL CHARACTERISTICS (T_CASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V_(BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I_D = 250 µA, V_GS = 0
Min.
24
Typ.
Max.
I_DSS
I_GSS
Zero Gate Voltage
Drain Current (V_GS = 0)
Gate-body Leakage
Current (V_DS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
V_GS = ± 18V
1
10
±100
°C/W
°C/W
°C
Unit
V
µA
µA
nA
ON ⁽⁴⁾
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
I_D = 20 A
V_GS = 4.5 V
I_D = 20 A
Min.
1
Typ. Max. Unit
V
0.010 0.011
Ω
0.012 0.0135 Ω
DYNAMIC
Symbol
g_fs ⁽⁴⁾
C_iss
C_oss
C_rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS = 10 V
I_D = 10 A
V_DS = 10V f = 1 MHz V_GS = 0
Min.
Typ.
18
990
385
40
Max.
Unit
S
pF
pF
pF
R_G
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
1.3
Ω
Test Signal Level = 20 mV
Open Drain
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