STD55NH2LL Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 24V - 0.010ohm - 40A DPAK/IPAK ULTRA LOW GATE CHARGE STripFET POWER MOSFET

STD55NH2LL
N-CHANNEL 24V - 0.010 Ω - 40A DPAK/IPAK
ULTRA LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
STD55NH2LL
V_DSS
24 V
R_DS(on)
< 0.011 Ω
I_D
40 A(*)
■ TYPICAL R_DS(on) = 0.01 Ω @ 10 V
■ TYPICAL R_DS(on) = 0.012 Ω @ 4.5 V
■ R_DS(ON) * Qg INDUSTRY’s BENCHMARK
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
The STD55NH2LL is based on the latest generation of
ST's proprietary STripFET™ technology. An innovative
layout enables the device to also exhibit extremely low
gate charge for the most demanding requirements as
high-side switch in high-frequency DC-DC converters. It's
therefore ideal for high-density converters in Telecom
and Computer applications.
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STD55NH2LLT4
STD55NH2LL-1
MARKING
D55NH2LL
D55NH2LL
ABSOLUTE MAXIMUM RATINGS
Symbol
V_spike(1)
V_DS
V_DGR
V_GS
I_D(*)
I_D
I_DM(2)
P_tot
E_AS(3)
T_stg
T_j
Parameter
Drain-source Voltage Rating
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T_C = 25°C
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
March 2004
PACKAGE
TO-252
TO-251
Value
30
24
24
± 18
40
28
160
60
0.4
600
-55 to 175
PACKAGING
TAPE & REEL
TUBE
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
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