STD30NE06LT4 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL 60V - 0.025 ohm - 30A TO-252

STD30NE06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
t_r
Parameter
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
Test Conditions
VDD = 30 V
ID = 15 A
R_G = 4.7 Ω
V_GS = 5 V
(Resistive Load, see fig. 3)
V_DD = 30 V I_D = 30 A V_GS = 5 V
Min.
Typ.
27
100
Max.
50
135
Unit
ns
ns
31
41
nC
13
nC
13.5
nC
SWITCHING OFF
) _Symbol
t(s ^tr(Voff)
c tf
u t_c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 48 V
I_D = 30 A
RG = 4.7 Ω
VGS = 5 V
(Inductive Load, see fig. 5)
Min.
Typ.
20
45
72
Max.
27
60
100
Unit
ns
ns
ns
Prod _t(s) ^{SOURCE DRAIN DIODE}
te ^{c Symbol}
le ^{u ISD}
d _ISDM(•)
bso ^Pro _{VSD (∗)}
- ^{O te trr}
) ^le _Qrr
ct(s ^{bso IRRM}
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
I_SD = 30 A V_GS = 0
I_SD = 30 A
V_DD = 30 V
di/dt = 100 A/µs
T_j = 150 ^oC
(see test circuit, fig. 5)
Min.
Typ.
55
0.1
3.5
Max.
30
120
1.5
Unit
A
A
V
ns
µC
A
rodu ^{- O (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %}
) _{(•) Pulse width limited by safe operating area}
O_O^b_b^s_s^o_o^l_l^e_e^t_t^ee ^{PProduct(s Safe Operating Area}
Thermal Impedance
3/8