STD30NE06LT4 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 60V - 0.025 ohm - 30A TO-252

®
STD30NE06L
N - CHANNEL 60V - 0.025 Ω - 30A TO-252
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD30NE06L 60 V
< 0.03 Ω
30 A
s TYPICAL RDS(on) = 0.025 Ω
s EXCEPTIONAL dv/dt CAPABILITY
) ^{s 100% AVALANCHE TESTED}
t(s ^{s LOW GATE CHARGE 100oC}
s APPLICATION ORIENTED
c _{CHARACTERIZATION}
du ^{s ADD SUFFIX "T4" FOR ORDERING IN TAPE}
ro ^{) & REEL}
P _{t(s DESCRIPTION}
te ^c This Power MOSFET is the latest development of
le du ^{STMicroelectronics unique "Single Feature}
so ^{ro Size™" strip-based process. The resulting transi-}
stor shows extremely high packing density for low
b ^P _{on-resistance, rugged avalanche characteristics}
- ^{O te and less critical alignment steps therefore a re-}
) ^{le markable manufacturing reproducibility.}
t(s ^{so APPLICATIONS}
c ^b _{s HIGH CURRENT, HIGH SPEED SWITCHING}
u _{O s SOLENOID AND RELAY DRIVERS}
rod ^{- s MOTOR CONTROL, AUDIO AMPLIFIERS}
P _t(s) ^{s DC-DC & DC-AC CONVERTERS}
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
solete ^{roduc ABSOLUTE MAXIMUM RATINGS}
b P _Symbol
Parameter
O _{te VDS}
le V_DGR
o _VGS
bsI_D
O I_D
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Value
60
60
± 20
30
21
Unit
V
V
V
A
A
I_DM(•)
P_tot
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
120
55
0.37
A
W
W/^oC
dv/dt (1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
7
-65 to 175
175
(1) ISD ≤30A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
May 1999
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