STD30NE06LT4 Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL 60V - 0.025 ohm - 30A TO-252

STD30NE06L
THERMAL DATA
Rthj-pcb
R_thj-amb
Rthj-sink
T_l
Thermal Resistance Junction-PC Board
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering
Purpose
Max
Max
Typ
2.72
100
1.5
275
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I_AR Avalanche Current, Repetitive or Not-Repetitive
30
A
(pulse width limited by T_j max)
E_AS Single Pulse Avalanche Energy
) ^{(starting T}j ^{= 25 oC, I}D ^{= I}AR^{, V}DD ^{= 25 V)}
100
mJ
ct(s ^{ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)}
u _OFF
rod ^{) Symbol}
P _t(s V_(BR)DSS
lete ^{uc IDSS}
bso ^{Prod IGSS}
Parameter
Test Conditions
Drain-source
Breakdown Voltage
I_D = 250 µA V_GS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating
T_c = 125 ^oC
Gate-body Leakage
Current (VDS = 0)
V_GS = ± 20 V
Min.
60
Typ.
Max.
Unit
V
1
µA
10
µA
± 100 nA
) ^{- O lete ON (∗)}
t(s ^{o Symbol}
c ^bs VGS(th)
u _{O RDS(on)}
Prod _t(s) ^{- ID(on)}
Parameter
Test Conditions
Gate Threshold Voltage V_DS = V_GS I_D = 250 µA
Static Drain-source On VGS = 10 V ID = 15 A
Resistance
V_GS = 5 V I_D = 15 A
On State Drain Current VDS > ID(on) x RDS(on)max
V_GS = 10 V
Min.
1
30
Typ.
1.7
0.022
0.025
Max.
2.5
0.028
0.030
Unit
V
Ω
Ω
A
lete duc ^DYNAMIC
so ^ro Symbol
b P _{gfs (∗)}
O _{lete Ciss}
o^Coss
Obs^Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max I_D = 15 A
Min.
15
Typ.
25
Max.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0 V
2370
pF
350
pF
90
pF
2/8