STD2NC40-1 Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

STD2NC40-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
t_d(on)
Turn-on Delay Time
t_r
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DD = 200V, I_D = 0.7A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
V_DD = 320V, ID = 1.5A,
V_GS = 10V
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
Off-voltage Rise Time
t_f
Fall Time
t_c
Cross-over Time
Test Condit ions
V_DD = 320V, I_D = 1.5A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
Min. Typ. Max. Unit
7.5
ns
12
ns
6.1
8.2
nC
2.1
nC
2.4
nC
Min .
Typ.
20
27
29
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (1) Source-drain Current (pulsed)
V_SD (2) Forward On Voltage
I_SD = 1.5A, V_GS = 0
t_rr
Reverse Recovery Time
I_SD = 1.5A, di/dt = 100A/µs,
V_DD = 100V, T_j = 150°C
(see test circuit, Figure 5)
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Safe Operating Area
Thermal Impedence
Typ.
Max.
1.5
6
1.5
180
625
5
Unit
A
A
V
ns
nC
A
3/8