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| STD2NC40-1 Datasheet, PDF (2/8 Pages) STMicroelectronics – N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET | |||
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STD2NC40-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
4.16
Rthj-amb Thermal Resistance Junction-ambient Max
100
Rthc-sink Thermal Resistance Case-sink Typ
1.5
Tl
Maximum Lead Temperature For Soldering Purpose
275
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
1.5
A
125
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
400
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 0.7 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min. Typ. Max. Unit
2
3
4
V
4.7
5.5
â¦
1.5
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID =0.7A
1.1
S
Ciss
Input Capacitance
108
pF
Coss
Output Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
22.5
pF
Crss
Reverse Transfer
Capacitance
0.4
pF
2/8
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